
| 目 录 Session 1 Introduction to Semiconductor 1.1 What is Semiconductor 1.2 Classification of Semiconductor Reading Materials Session 2 Crystal Structure 2.1 Primitive Cell and Crystal Plane 2.2 Atomic Bonding Reading Materials Session 3 Band Model 3.1 Introduction to Quantum Mechanics 3.2 Band 3.3 Effective Mass Theory Reading Materials Session 4 The Semiconductor in Equilibrium 4.1 Charge Carriers in Semiconductor 4.2 Intrinsic Semiconductor 4.3 Extrinsic Semiconductor Reading Materials Session 5 Carrier Transport 5.1 Overview of Carrier Transport 5.2 Low Field Transport 5.3 High Field Transport 5.4 Diffusion Current Session 6 Nonequilibrium Excess Carriers in Semiconductor 6.1 Recombination 6.2 Minority Carrier Lifetime 6.3 Ambipolar Transport Reading Materials Session 7 The pn Junction ( Ⅰ ) 7.1 Introduction 7.2 Basic Structure of the pn Junction 7.3 Energy Bands for a pn Junction 7.4 Ideal CurrentVoltage Relationship 7.5 Characteristics of a Practical Diode Reading Materials Session 8 The pn Junction( Ⅱ ) 8.1 Breakdown in pn Junction 8.2 SmallSignal Diffusion Resistance of the pn Junction 8.3 Junction Capacitance 8.4 Diffusion or Storage Capacitance 8.5 Diode Transients 8.6 Circuit Models for Junction Diodes Reading Materials Session 9 MetalSemiconductor Contacts 9.1 Schottky Contacts 9.2 Ohmic Contacts Reading Materials Session 10 Heterojunctions 10.1 Strain and Stress at Heterointerfaces 10.2 Heterojunction Materials 10.3 EnergyBand Diagrams Reading Materials. Session 11 The Bipolar Junction Transistor ( Ⅰ ) 11.1 The Bipolar Junction Transistor Construction 11.2 Transistor Action 11.3 Nonideal Effects 11.4 Base Resistance Reading Materials Session 12 The Bipolar Junction Transistor ( Ⅱ ) 12.1 Breakdown Voltage 12.2 Frequency Limits of BJT 12.3 The SchottkyClamped Transistor 12.4 Smallsignal Transistor Model Reading Materials Session 13 Basics of MOSFETs 13.1 Introduction 13.2 General Characteristics of a MOSFET 13.3 MOS System 13.4 Work Function Differences 13.5 FlatBand Voltage 13.6 Threshold Voltage Reading Materials Session 14 Nonideal Effects of MOSFETs 14.1 Introduction 14.2 Effective Mobility 14.3 Velocity Saturation 14.4 Channellength Modulation 14.5 DIBL 14.6 Hotcarrier Effect 14.7 GIDL Reading Materials Session 15 Advanced MOSFET Devices 15.1 Introduction 15.2 Channel Doping Profile 15.3 Gate Stack 15.4 Source/Drain Design 15.5 SchottkyBarrier Source/Drain 15.6 Raised Source/Drain 15.7 SOI 15.8 Three Dimensional Structure Reading Materials Session 16 Introduction to Integrated Circuits 16.1 Introduction 16.2 Size and Complexity of Integrated Circuits 16.3 Semiconductor Device for Integrated Circuits 16.4 IC Design Process Reading Materials Session 17 Analog Integrated Circuits Design 17.1 Introduction 17.2 Analog Signal Processing 17.3 CMOS Technology 17.4 Amplifiers 17.5 Differential Amplifiers 17.6 Operational Amplifiers 17.7 Characterization of Op Amps Reading Materials Session 18 Digital Integrated Circuits Design 18.1 Introduction 18.2 The Static CMOS Inverter 18.3 Designing Combinational Logic Gates in CMOS Reading Materials Session 19 Radio Frequency Integrated Circuits Design 19.1 Introduction 19.2 RF System Performance Metrics 19.3 RF Transceiver Architectures 19.4 RF Passive Component |
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