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| 《国外信息科学与技术优秀图书系列：功率半导体器件基础（英文版）》深入讨论了半导体功率器件的物理模型、工作原理、设计原则和应用特性，不仅详细介绍了硅基器件，还讨论了碳化硅器件的特性与设计要求。本书可作为微电子、电力电子等相关领域科研人员、工程技术人员的参考书，也可作为相关专业高年级本科生、研究生的教材。 |
| Preface Chapter 1 Introduction 1.1 Ideal and Typical Power Switching Waveforms 1.2 Ideal and Typical Power Device Characteristics 1.3 Unipolar Power Devices 1.4 Bipolar Power Devices 1.5 MOS-Bipolar Power Devices 1.6 Ideal Drift Region for Unipolar Power Devices 1.7 Charge-Coupled Structures: Ideal Specific On-Resistance 1.8 Summary Problems References Chapter 2 Material Properties and Transport Physics 2.1 Fundamental Properties 2.1.1 Intrinsic Carrier Concentration 2.1.2 Bandgap Narrowing 2.1.3 Built-in Potential 2.1.4 Zero-Bias Depletion Width 2.1.5 Impact Ionization Coefficients 2.1.6 Carrier Mobility 2.2 Resistivity 2.2.1 Intrinsic Resistivity 2.2.2 Extrinsic Resistivity 2.2.3 Neutron Transmutation Doping 2.3 Recombination Lifetime Chapter 3 Breakdown Voltage Chapter 4 Schottky Rectifiers Chapter 5 P-i-N Rectifiers Chapter 6 Power Mosfets Chapter 7 Bipolar Junction Transistors Chapter 8 Thyristors Chapter 9 Insulated Gate Bipolar Transistors Chapter 10 Synopsis Index |
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