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纳米结构中的声子(英文版)

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作者：M.A.Stroscio 著

出版社：世界图书出版公司

出版时间：2003 年9月

I S B N：7506259303

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纳米结构中的声子

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纳米结构中的声子

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纳米结构中的声子（英文版）

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纳米结构中的声子(英文版)

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内容简介

this book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modem electronic and optoelectronic devices. .
　　the continuing progress in the fabrication of semiconductor nanostructures with lower dimensional features has led to devices with enhanced functionality and even to novel devices with new operating principles. the critical role of phonon effects in such semiconductor devices is well known. there is therefore a pressing need for a greater awareness and understanding of confined phonon effects. a key goal of this book is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. ..
　　the level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices. a basic understanding of electromagnetism and classical acoustics is assumed. ...

作者简介

DR MICHAEL A. STROSCIO earned a Ph.D. in physics from Yale University and held research positions at the Los Alamos Scientific Laboratory and the Johns Hopkins University Applied Physics Laboratory, before moving into the management of federal research and development at a variety of US government agencies. Dr Stroscio has served as a policy analyst for the White House Office of Science and Technology Policy and as Vice Chairman of the White Hous.. << 查看详细

preface .xi
chapter 1 phonons in nanostructures 1
1.1 phonon effects: fundamental limits on carrier mobilities and dynamical processes 1
1.2 tailoring phonon interactions in devices with nanostructure components
chapter 2 phonons in bulk cubic crystals 6
2.1 cubic structure 6
2.2 ionic bonding - polar semiconductors 6
2.3 linear-chain model and macroscopic models 7
2.3.1 dispersion relations for high-frequency and low-frequency modes 8
2.3.2 displacement patterns for phonons 10
2.3.3 polaritons 11
2.3.4 macroscopic theory of polar modes in cubic crystals 14
chapter 3 phonons in bulk wurtzite crystals 16
3.1 basic properties of phonons in wiirtzite structure 16
3.2 loudon model of uniaxial crystals 18
3.3 application of loudon model to iii-v nitrides 23
chapter 4 raman properties of bulk phonons 26
4.1 measurements of dispersion relations for bulk samples 26
4.2 raman scattering for bulk zincblende and wiirtzite structures 26
4.2.1 zincblende structures 28

.4.2.2 wiirtzite structures 29
4.3 lifetimes in zincblende and wiirtzite crystals 30
4.4 ternary alloys 32
4.5 coupled plasmon-phonon modes 33
chapter 5 occupation number representation 35
5.1 phonon mode amplitudes and occupation numbers 35
5.2 polar-optical phonons: fr6hlicb interaction 40
5.3 acoustic phonons and deformation-potential interaction 43
5.4 piezoelectric interaction 43
chapter 6 anharmonic coupling ofphonons 45
6.1 non-parabolic terms in the crystal potential for ionically bonded atoms 45
6.2 klemens' channel for the decay process lo → la(1) + la(2) 46
6.3 lo phonon lifetime in bulk cubic materials 47
6.4 phonon lifetime effects in carrier relaxation 48
6.5 anharmonic effects in wiirtzite structures: the ridley channel 50
chapter 7 continuum models for phonons 52
7.1 dielectric continuum model of phonons 52
7.2 elastic continuum model of phonons 56
7.3 optical modes in dimensionally confined structures 60
7.3.1 dielectric continuum model for slab modes: normalization of interface modes 61
7.3.2 electron-phonon interaction for slab modes 66
7.3.3 slab modes in confined wiirtzite structures 71
7.3.4 transfer matrix model for multi-heterointerface structures 79
7.4 comparison of continuum and microscopic models for phonons 90
7.5 comparison of dielectric continuum model predictions with raman measurements 93
7.6 continuum model for acoustic modes in dimensionally confined structures 97
7.6.1 acousticphononsinafree-standinganduncot,strainedlayer 97
7.6.2 acousticphononsindouble-interfitceheterostructures 100
7.6.3 acoustic phonons in rectangular quantum wires 105
7.6.4 acoustic phonons in cylindrical structures ..111
7.6.5 acoustic phono,s in quantum dots 124
chapter 8 carrier-lo-phonon scattering 131
8.1 frohlich potential for lo phonons in bulk zincblende and wiirtzite structures 131
8.1.1 scattering rates in bulk zincblende semiconductors 131
8.1.2 scattering rates in bulk wiirtzite semiconductors 136
8.2 frohlich potential in quantum wells 140
8.2.1 scattering rates in zincblende quantum-well structures 141
8.2.2 scattering rates in wiirtzite quantum wells 146
8.3 scattering of carriers by lo phonons in quantum wires 146
8.3.1 scattering rate for bulk lo phonon modes in quantum wires 146
8.3.2 scattering rate for confined lo phonon modes in quantum wires 150
8.3.3 scattering rute for interface-lo phonon modes 154
8.3.4 collective effects and non-equilibrium phonons in polar quantum wires 162
8.3.5 reduction of interface-phonon scattering rates in metal-semiconductor structures 165
8.4 scattering of carriers and lo phonons in quantum dots 167
chapter 9 carrier-acoustic-phonon scattering 172
9.1 carrier-acoustic-phonon scattering in bulk zincblende structures 172
9.1.1 deformation-potential scattering in bulk zincblende structures 172
9.1.2 piezoelectric scattering in bulk semiconductor structures 173
9.2 carrier-acoustic-phonon scattering in two-dimensional structures 174
9.3 carrier-acoustic-phonon scattering in quantum wires 175
9.3.1 cylindrical wires 175
9.3.2 rectangular wires 181
chapter 10 recent developments 186
10.1 phonon effects in intersubband lasers 186
10.2 effect of confined phonons on gain of intersubband lasers 195
10.3 phonon contribution to valley current in double-barrier structures 202
10.4 phonon-enhanced population inversion in asymmetric double-barrier quantum-well lasers 205
10.5 confined-phonon effects in thin film superconductors 208
10.6 generation of acoustic phonons in quantum-well structures 212
chapter 11 concluding considerations 218
11.1 pervasive role of phonons in modem solid-state devices 218
11.2 future trends: phonon effects in nanostmctures and phonon engineering 219
appendices 221
appendix a: huang-bom theory 221
appendix b: wendler's theory 222
appendix c: optical phonon modes in double-heterointerface structures 225
appendix d: optical phonon modes in single- and double-heterointefface wurtzite structures 236
appendix e: fermi golden rule 250
appendix f: screening effects in a two-dimensional electron gas 252
references 257
index ...271