| Donald A. Neamen is a professor emeritus in the Department of Electrical and Computer Engineering at the University of New Mexico where he taught for more than 25 years. He received his Ph.D. from the University of New Mexico and then became an electronics engineer at the Solid State Sciences Laboratory at Hanscom Air Force Base. In 1976, he joined the faculty in the ECE department at the University of New Mexico, where he specialized in teachin.. << 查看详细 |
| preface. chapter 1 the crystal structure of solids 1.0 preview 1.1 semiconductor materials 1.2 types of solids 1.3 space lattices 1.4 atomic bonding 1.5 imperfections and impurities in solids ∑1.6 growth of semiconductor materials ∑1.7 device fabrication techniques:oxidation 1.8 summary problems chapter 2 theory of solids 2.0 preview 2.1 principles of quantum mechanics 2.2 energy quantization and probability concepts 2.3 energy-band theory 2.4 density of states function 2.5 statistical mechanics 2.6 summary .problems chapter 3 the semiconductor in equilibrium 3.0 preview 3.1 charge carriers in semiconductors 3.2 dopant atoms and energy levels 3.3 carrier distributions in the extrinsic semiconductor 3.4 statistics of donors and acceptors 3.5 carrier concentrations--effects of doping 3.6 position of fermi energy level--effects of doping and temperature ∑3.7 device fabrication technology: diffusion and ion implantation 3.8 summary problems chapter 4 carrier transport and excess carrier phenomena 128 4.0 preview 4.1 carrier drift 4.2 carrier diffusion 4.3 graded impurity distribution 4.4 carrier generation and recombination ∑4.5 the hall effect 4.6 summary problems chapter 5 the pn junction and metal-semiconductor contact 5.0 preview 5.1 basic structure of the pn junction 5.2 the pn junction--zero applied bias 5.3 the pn junction--reverse applied bias 5.4 metal-semiconductor contact--rectifying junction 5.5 forward applied bias--an introduction ∑5.6 metal-semiconductor ohmic ∑5.7 nonuniformly doped pn junctions ∑5.8 device fabrication techniques: photolithography, etching, and bonding 5.9 summary problems chapter 6 fundamentals of the metal-oxide-semiconductor field-effect transisitor 6.0 preview 6.1 the mos field-effect transistor action 6.2 the two-terminal mos capacitor 6.3 potential differences in the mos capacitor 6.4 capacitance-voltage characteristics 6.5 the basic mosfet operation 6.6 small-signal equivalent circuit and frequency limitation factors ∑6.7 device fabrication techniques 6.8 summary problems chapter 7 metal-oxide-semiconductor field-effect transistor: additional concepts 7.0 preview 7.1 mosfet scaling 7.2 nonideal effects 7.3 threshold voltage modifications 7.4 additional electrical dharacteristics 7.5 device fabrication techniques: specialized devices 7.6 summary.. problems chapter 8 nonequilibrium excess carriers in semiconductors 8.0 preview 8.1 carrier generation and recombination 8.2 analysis of excess carriers 8.3 ambipolar transport 8.4 quasi-fermi energy levels 8.5 excess carrier lifetime 8.6 surface effects 8.7 summary problems chapter 9 the pn junction and schottky diodes 9.0 preview 9.1 the pn and schottky barrier junctions revisited 9.2 the pn junction--ideal current-voltage relationship 9.3 the schottky barrier junction--ideal current-voltage relationship 9.4 small-signal model of the pn junction 9.5 generation-recombination currents 9.6 junction breakdown 9.7 charge storage and diode transients 9.8 summary problems chapter 10 the bipolar transistor 10.0 preview 10.1 the bipolar transistor action 10.2 minority-carrier distribution 10.3 low-frequency common-base current gain 10.4 nonideal effects 10.5 hybrid-pi equivalent circuit model 10.6 frequency limitations ∑10.7 large-signal switching ∑10.8 device fabrication techniques 10.9 summary problems chapter 11 additional semiconductor devices and device concepts 11.0 preview 11.1 the junction field-effect transistor 11.2 heterojunctions 11.3 the thyristor 11.4 additional mosfet concepts 11.5 microelectromechanical systems (mems) 11.6 summary problems chapter 12 optical devices 12.0 preview 12.1 optical absorption 12.2 solar cells 12.3 photodetectors 12.4 light-emitting diodes 12.5 laser diodes 12.6 summary problems appendix a selected list of symbols appendix b system of units, conversion factors, and general constants appendix c unit of energy—the electron-volt appendix d “derivation”and applications of schrodinger's wave equation index... |
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