| 《模拟CMOS集成电路设计》(影印版)自2000午出版以来得到了国内外读者的好评和青睐，被许多国际知名大学选为教科书。同时，由于原著者在世界知名顶级公司的丰富研究经历，使《模拟CMOS集成电路设计》(影印版)也非常适合作为CMOS模拟集成电路设计或相关领域的研究人员和工程技术人员的参考书。美国加州大学洛杉机分校(UCLA)Razavi教授凭借着他在美国多所著名大学执教多年的丰富教学经验和在世界知名顶级公司(AT&T，Bell Lab，HP)卓著的研究经历为我们提供了这本优秀的教材。 |
| Behzad Razavi received the B.B.Sc.degree in electrical engineering from Sharif University of Technology in 1985 and the M.Sc. and Ph.D.degrees in electrical engineering from Stanford University in 1998 and 1992,respectively.He was with AT&T Bell Laboratories and subsequently Hewlett-Packard Laboratories until 1996. |
| About the Author Preface Acknowledgments 1 Introduction to Analog Design 1.1 Why Analog? 1.2 Why Inegrated? 1.3 Why CMOS? 1.4 Why This Book? 1.5 General Concepts 2 Basic MOS Device Physics 2.1 General Considerations 2.2 MOS I/V Characteristics 2.3 Second-Order Effects 2.4 MOS Device Model 3 Single-Stage Amplifiers 3.1 Basic Concepts 3.2 Common-Source Stage 3.3 Source Follower 3.4 Common-Gate Stage 3.5 Cascode Stage 3.6 Choice of Device Models 4 Differential Amplifiers …… 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops Appendix A Short-Channel Effects and Device Models Appendix B CMOS Processing Technology Appendix C Layout and Packaging Index |
内容加载中，请稍后...
商品评论（0条）