| 本书国外电子信息精品著作(影印版)系列之一，内容丰富，从主流模型的讨论到小尺寸器件模型和量子效应的介绍，从模型参数的提取方法到模型在硬件描述语言中的应用等方面都作了详细的论述。本书对设计工程师和器件工程师都有很好的参考价值。 |
| Foreword Hiroshi Iwai Introduction Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs 1 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno 2 PSP: An advanced surface-potential-based MOSFET model R. van Langevelde, and G. Gildenblat 3 EKV3.0: An advanced charge based MOS transistor model. A design-oriented MOS transistor compact model for next generation CMOS Matthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz 4 Modelling using high-frequency measurements Dominique Schreurs 5 Empirical FET models Iltcho Angelov 6 Modeling the SOI MOSFET nonlinearities. An empirical approach B. Parvais, A. Siligaris 7 Circuit level RF modeling and design Nobuyuki Itoh 8 On incorporating parasitic quantum effects in classical circuit simulations Frank Felgenhauer, Maik Begoin and Wolfgang Mathis 9 Compact modeling of the MOSFET in VHDL-AMS Christophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny 10 Compact modeling in Verilog-A Boris Troyanovsky, Patrick O'Halloran and Marek Mierzwinski Index |
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