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| Scientific and technological issues related to rare earth oxides : an introduction Atomic layer deposition of rare earth oxides MOCVD growth of rare earth oxides : the case of the praseodymium/oxygen system Requirements of precursors for MOCVD and ALD of rare earth oxides Models for ALD and MOCVD growth of rare earth oxides Growth of oxides with complex stoichiometry by the ALD technique, exemplified by growth of La[subscript 1-x]Ca[subscript x]MnO[subscript Molecular beam epitaxy of rare-earth oxides Fabrication and characterization of rare earth scandate thin films prepared by pulsed laser deposition Film and interface layer composition of rare earth (Lu, Yb) oxides deposited by ALD Local atomic environment of high-[Kappa] oxides on silicon probed by x-ray absorption spectroscopy Local structure, composition and electronic properties of rare earth oxide thin films studied using advanced transmission electron microscopy techniques (TEM-EELS) Strain-relief at internal dielectric interfaces in high-k gate stacks with transition metal and rare earth atom oxide dielectrics Electrical characterization of rare earth oxides grown by atomic layer deposition Dielectric properties of rare-earth oxides : general trends from theory Charge traps in high-k dielectrics : ab initio study of defects in Pr-based materials Experimental determination of the band offset of rare earth oxides on various semiconductors Band edge electronic structure of transition metal/rare earth oxide dielectrics Electronic structure and band offset of lanthanide oxides Electronic structure of rare earth oxides Rare earth oxides in microelectronics Requirements of oxides as gate dielectrics for CMOS devices Rare earth oxides grown by molecular beam epitaxy for ultimate scaling The magneto-electric properties of RMnO[subscript 3] compounds Sesquioxides as host materials for rare-earth-doped bulk lasers and active waveguides Table of Contents provided by Blackwell. All Rights Reserved. |
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