| 本书是一本优秀的模拟电子电路基础英语原版教材(第九版)的改编版，内容涉及半导体器件基础，二极管及其应用电路，晶体管和场效应管放大电路的基本原理及频率响应，功率放大电路，多级放大电路、差分放大电路、电流元等模拟集成电路的单元电路，反馈电路，模拟集成运算放大器，电压比较器和波形变换电路等。 |
| Chapter 1 Semiconductor Diodes 1.1 Introduction 1.2 Semiconductor Materials: Ge, Si, and GaAs 1.3 Covalent Bonding and Intrinsic Materials 1.4 Extrinsic Materials: n-Type andp-Type Materials 1.5 Semiconductor Diode 1.6 Ideal Versus Practical 1.7 Resistance Levels 1.8 Diode Equivalent Circuits 1.9 Transition and Diffusion Capacitance 1.10 Reverse Recovery Time 1.11 Diode Specification Sheets 1.12 Semiconductor Diode Notation 1.13 Zener Diodes 1.14 Summary 1.15 Computer Analysis Problems Chapter 2 Diode Aoolications 2.1 Introduction 2.2 Load-Line Analysis 2.3 Equivalent Model Analysis 2.4 AND/OR Gates 2.5 Sinusoidal Inputs: Half-Wave Rectification 2.6 Full-Wave Rectification 2.7 Clippers 2.8 Clampers 2.9 Zener Diodes 2.10 Summary Problems Chapter 3 Bipolar Junction Transistors 3.1 Introduction 3.2 Transistor Construction 3.3 Transistor Operation 3.4 Common-Base Configuration 3.5 Transistor Amplifying Action 3.6 Common-Emitter Configuration 3.7 Common-Collector Configuration 3.8 Limits of Operation 3.9 Transistor Specification Sheet 3.10 Transistor Casing and Terminal Identification 3.11 Summary Problems Chapter 4 DC Biasing-BJTs 4.1 Introduction 4.2 Operating Point 4.3 Fixed-Bias Circuit 4.4 Emitter Bias 4.5 Voltage-Divider Bias 4.6 DC Bias with Voltage Feedback 4.7 Miscellaneous Bias Configurations 4.8 Transistor Switching Networks 4.9 pnp Transistors 4.10 Bias Stabilization 4.11 Summary Problems Chapter 5 BJT AC Analysis 5.1 Introduction 5.2 Amplification in the AC Domain 5.3 BJT Transistor Modeling 5.4 The r Transistor Model 5.5 The Hybrid Equivalent Model 5.6 Hybrid π Model 5.7 Variations of Transistor Parameters 5.8 Common-Emitter Fixed'Bias Configuration …… |
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